? semiconductor components industries, llc, 2005 june, 2005 ? rev. 3 1 publication order number: mmbta05lt1/d mmbta05lt1, mmbta06lt1 mmbta06lt1 is a preferred device driver transistors npn silicon features ? pb?free packages are available maximum ratings rating symbol value unit collector ?emitter voltage mmbta05lt1 mmbta06lt1 v ceo 60 80 vdc collector ?base voltage mmbta05lt1 mmbta06lt1 v cbo 60 80 vdc emitter ?base voltage v ebo 4.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. sot?23 case 318 style 6 2 3 1 preferred devices are recommended choices for future use and best overall value. marking diagrams 1h m mmbta05lt1 collector 3 1 base 2 emitter 1gm m mmbta06lt1 http://onsemi.com 1h, 1gm = specific device code m = date code = pb?free package (note: microdot may be in either location) see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information
mmbta05lt1, mmbta06lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) mmbta05 mmbta06 v (br)ceo 60 80 ? ? vdc emitter ?base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1 adc collector cutoff current (v cb = 60 vdc, i e = 0) mmbta05 (v cb = 80 vdc, i e = 0) mmbta06 i cbo ? ? 0.1 0.1 adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector ?emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base ?emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small? signal characteristics current ?gain ? bandwidth product (note 4) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) f t 100 ? mhz 3. pulse test: pulse width 300 s, duty cycle 2.0%. 4. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn?on time ?1.0 v v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 0 +10 v 5.0 s output turn?off time +v bb v cc +40 v r l * c s 6.0 pf r b 100 100 v in 5.0 f t r = 3.0 ns 5.0 s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
mmbta05lt1, mmbta06lt1 http://onsemi.com 3 figure 2. current?gain ? bandwidth product figure 3. capacitance figure 4. switching time 100 200 2.0 i c , collector current (ma) 300 200 100 70 50 30 10 100 0.1 v r , reverse voltage (volts) 80 60 40 20 10 8.0 20 v ce = 2.0 v t j = 25 c t j = 25 c 3.0 5.0 7.0 10 20 30 50 70 f t , current?gain ? bandwidth product (mhz) 50 1.0 2.0 5.0 0.2 0.5 6.0 4.0 c ibo c obo 20 10 i c , collector current (ma) 200 100 50 20 10 100 t, time (ns) 50 200 500 1.0 k 500 v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r 5.0 7.0 30 70 300 700 30 70 t d @ v be(off) = 0.5 v c, capacitance (pf) 300 figure 5. dc current gain 2.0 500 0.5 i c , collector current (ma) 400 200 100 80 60 40 10 , dc current gain t j = 125 c 1.0 3.0 5.0 v ce = 1.0 v 20 100 30 50 200 300 h fe 25 c ?55 c figure 6. ?on? voltages 10 500 1.0 i c , collector current (ma) 1.0 0.8 0.6 0.4 0.2 0 100 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v 0.5 2.0 5.0 200 20 50
mmbta05lt1, mmbta06lt1 http://onsemi.com 4 figure 7. collector saturation region figure 8. base?emitter temperature coefficient 100 500 0.5 i c , collector current (ma) ?0.8 ?1.2 ?1.6 ?2.0 ?2.4 ?2.8 0.1 10 0.05 i b , base current (ma) 1.0 0.8 0.6 0.4 0.2 0 1.0 t j = 25 c r vb , temperature coefficient (mv/ c) 10 r vb for v be 50 i c = 100 ma i c = 50 ma i c = 250 ma i c = 500 ma i c = 10 ma , collector?emitter voltage (volts ) v ce 1.0 2.0 5.0 20 50 200 20 2.0 5.0 0.2 0.5 ordering information device package shipping ? mmbta05lt1 sot?23 3000 / tape & reel mmbta05lt1g sot?23 (pb?free) 3000 / tape & reel mmbta05lt3 sot?23 10,000 / tape & reel mmbta05lt3g sot?23 (pb?free) 10,000 / tape & reel mmbta06lt1 sot?23 3000 / tape & reel mmbta06lt1g sot?23 (pb?free) 3000 / tape & reel MMBTA06LT3 sot?23 10,000 / tape & reel MMBTA06LT3g sot?23 (pb?free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mmbta05lt1, mmbta06lt1 http://onsemi.com 5 package dimensions style 6: pin 1. base 2. emitter 3. collector b c l d a e a1 e 3 1 2 dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.35 0.54 0.69 0.014 2.10 2.40 2.64 0.083 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. h e 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.021 0.029 0.094 0.104 nom max h e sot?23 (to?236) case 318?08 issue al mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
mmbta05lt1, mmbta06lt1 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mmbta05lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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